Global RF Power Semiconductor Market: Research Design

According to the MarketsandMarkets forecast, the RF power semiconductor market size, in terms of value, is expected to grow from USD 10.57 Billion in 2015 to USD 31.26 Billion by 2022, at a CAGR of 15.4% between 2016 and 2022. The rapid growth of the smartphone market, increased use of LTE, and increased use of RF power for lighting applications are factors that help drive the RF power semiconductor market.

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The scope of this report covers the RF power semiconductor market on the basis of products, frequencies, materials, applications, and geography. The market is further segmented on the basis of geography into various countries. The consumer application is expected to hold the largest market share during the forecast period. The market for the aerospace & defense application is expected to grow at the highest rate during the forecast period owing to the increasing demand for RF power semiconductor devices in avionics and radar systems.

The RF power amplifiers held the largest share of the RF power semiconductor market in 2015. The RF power amplifiers have applications in sectors such as aerospace & defense, automotive, medical, telecommunication and data communication, consumer, and others. The other devices such as RF duplexers and RF switches are also expected to witness high growth in the RF power semiconductor market.

The RF power semiconductor market for the frequency band 10 GHz to 20 GHz is expected to hold the largest market size during the forecast period. Satellite communication is the major application for this range in the RF semiconductor market. This band is also used for fixed and broadcast services and for specific applications by the National Aeronautics and Space Administration (NASA) (U.S.). Furthermore, it is used for backhauls and for satellites from remote locations for editing and broadcasting to a TV network studio.

The RF power semiconductor market on the basis of materials was dominated by gallium arsenide. Gallium arsenide material has higher electron mobility than silicon. It is used on a large scale for monolithic microwave integrated circuit (MMIC) applications. The market for gallium nitride is expected to grow at the highest CAGR in the RF power semiconductor market.

The APAC region is expected to witness huge growth opportunities for the companies operating worldwide and it is the leading region in terms of market size in the worldwide RF power semiconductor market. The established electronics industry in the APAC region is the major driving factor for its growth in the global RF power semiconductor market. Furthermore, the low manufacturing and developing costs in APAC countries such as Taiwan, Malaysia, and China also propel the growth of the RF power semiconductor market in the region.

However, the RF power semiconductor market is a highly fragmented market, which reduces the price margin of the RF device suppliers. The increase in the cost of RF devices with performance improvement is another restraint for this market. The key players in the RF power semiconductor market include Infineon Technologies AG (Germany), M/A-COM Technology Solutions Holdings, Inc. (U.S.), NXP Semiconductors N.V. (Netherlands), Qorvo, Inc. (U.S.), Broadcom Limited (U.S.), Toshiba Corporation (Japan), Qualcomm Inc. (U.S.), Skyworks Solutions, Inc. (U.S.), Mitsubishi Electric Corporation (Japan), and Murata Manufacturing (Japan). These players adopted various strategies such as new product developments, mergers, partnerships, collaborations, and business expansion to cater to the needs of the RF power semiconductor market.

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