According to the new market research report "Monolithic Microwave IC (MMIC) Market by Component (Power Amplifiers, LNA, Attenuators), Material Type (GaAs, InP), Frequency Band (L, S, C), Technology (MESFET, HEMT), Application (Automotive, A&D), and Geography - Global Forecast to 2024", the overall MMIC market is expected to grow from USD 7.7 billion in 2019 to USD 12.7 billion by 2024, at a CAGR of 10.6%. Factors such as the increased demand for MMICs from the flourishing smartphone industry; increasing adoption of E band to meet the growing bandwidth requirements of the space, defense, and wireless communication infrastructure sectors; and rising defense spending of countries, globally are driving the growth of the MMIC market.
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“APAC is expected to account for the largest market share during forecast period”
The growth of the market in this region can be attributed to the high adoption rate of smartphones; significant shift toward high-speed mobile technologies (for instance, the shift from 3G to 4G); increased use of mobile services, including video, social media, e-commerce, and financial services; and rise in the military expenditure of countries such as China, India, Japan, and South Korea. China is a global manufacturing hub with a flourishing electronics industry and one of the fastest-growing economies in the world. Factors such as the rise in defense spending, increased focus of governments on the automotive industry, and scientific and technological developments in MMICs are leading to the growth of the MMIC market in China.
Key Market Players
Some major companies operating in the global MMIC market are Analog Devices (US), NXP Semiconductor (Netherlands), MACOM (US), Qorvo (US), Skyworks Solutions (US), Broadcom (US), Infineon Technologies (Germany), Maxim Integrated (US), Mini-Circuits (US), OMMIC (France), WIN Semiconductors (Taiwan), United Monolithic Semiconductors (UMS) (France), Custom MMIC Design Services (US), Microarray Technologies (China), VectraWave (France), BeRex (South Korea), and Arralis (Ireland).
NXP Semiconductors (Netherlands) is a major player in the field of semiconductor solutions, owing to its wide geographic presence combined with its robust R&D capabilities. The company is growing due to the positive outlook for the automotive semiconductors, wearables, and the Internet of Things markets across the globe. NXP Semiconductors focuses on adopting organic growth strategies such as product launches to enhance its market position. For instance, it launched RF GaN wideband power transistors and expanded its Airfast third-generation Si-LDMOS portfolio of macro and outdoor small cell solutions for 5G in 2018.
Power amplifiers segment is expected to hold the largest share of the MMIC market during the forecast period.
Power amplifiers convert low-power radio frequency signals to high-power signals. These amplifiers are mostly used in transmitters of radio frequency-based communication systems for driving antennas. Most of the power amplifiers are designed taking into consideration a specific application producing a specific type of signal, signal modulation scheme, and a set of specifications such as frequency range, gain (dB), gain flatness (dB), supply voltage (VDC), power decibels (dB-milliwatt), and package type. The growth of this segment can be attributed to the increased use of power amplifiers in defense, automotive, smartphones, and wireless communication applications. Continuously growing demand for high data transfer rates in communication systems has led to an increased demand for power amplifiers.
Gallium nitride segment is expected to grow at the highest CAGR during the forecast period
Gallium Nitride (GaN) is an emerging alternative for pure silicon in the field of semiconductors and electronics due to its high brightness emissions and intensities in opto-semiconductors, high-power efficiency, superior high frequency handling capacity, and flexibility to be used alongside various substrates such as silicon, sapphire, and Silicon Carbide (SiC). Gallium nitride is very hard and mechanically stable semiconductor material with a wide bandgap and high heat capacity and thermal conductivity. MMICs developed using gallium nitride offer large bandwidth, improved power density, and high efficiency to support the future cellular infrastructure such as 5G for the mobile base station transmitters.
E-pHEMT segment is expected to grow at the highest CAGR during the forecast period.
E-pHEMTs offer superior output power and high efficiency with bias voltages of less than +3 VDC. For commercial communication systems, E-pHEMTs offer a combination of high gain, low noise, and wide dynamic range in high-linearity MMIC applications. These transistors can economically provide superior electrical performance in Very High Frequency (VHF) and Ultra-high Frequency (UHF) wireless communication bands commonly associated with technologies such as GaAs MESFETs and depletion-mode pHEMTs.
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